AL-E439 ENERGY BAND GAP OF SEMICONDUCTOR USING FOUR PROBE METHOD  

AL-E439 ENERGY BAND GAP OF SEMICONDUCTOR USING FOUR PROBE METHOD
 

Project Information

  • Category: PHYSICS
  • Sub Category: ADVANCE PHYSICS
  • Model Number:
  • Category: PHYSICS

Description

ENERGY BAND GAP OF SEMICONDUCTOR USING FOUR PROBE METHOD

 

SCOPE OF LEARNING:

 

  • Band Gap of Semiconductor
  • Resistivity of Semiconductor
    • TECHNICAL SPECIFICATIONS:
    •  
      • Digital Meters:
      • Digital Milli Voltmeter 200mV
      • Digital Milli Ammeter 200mA
        • Power Supply:
        • Constant Current Power Supply 20mA

 

 

 

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The experiment consists of the following:

 

  • Four Probe Arrangement
  •  Oven (up to 200ºC)
  •  Sample : Ge Crystal mounted
  •  Thermometer (0-200ºC)
  •  Four Probe Setup
  • Output Brought Out Through 4mm Banana Plugs.

 

SALIENT FEATURES:

 

  • Front panel built with high class insulated Printed Circuit Board sheet with well printed circuits and      symbols.
    • Instruction manual.
    • Connections are brought out through 4mm BT15 Terminals.
    • The trainer is housed in Metal cabinet.
    • Size of the trainer set 13”x6”

 

OPTIONAL ACCESSORIES:

 

  • Digital Temperature Meter.
  • Multimeter.

 

Technical Details